Display apparatus and method of manufacturing the same

ABSTRACT

A method of manufacturing a display apparatus includes separating a light-emitting diode (“LED”) chip from a base substrate; disposing the separated light-emitting diode chip in a solution; disposing a substrate including a first electrode thereon, in the solution; with the separated light-emitting diode chip and the substrate including the first electrode thereon in the solution, applying a negative voltage to the substrate to attract the separated light-emitting diode chip to the first electrode on the substrate; mounting the light-emitting diode chip attracted to the first electrode, on the first electrode; and removing the substrate with the light-emitting diode chip mounted on the first electrode from the solution and drying the removed substrate, to form the display apparatus.

This application claims priority to Korean Patent Application No.10-2015-0123194, filed on Aug. 31, 2015, and all the benefits accruingtherefrom under 35 U.S.C. § 119, the contents of which in their entiretyare herein incorporated by reference.

BACKGROUND

1. Field

One or more exemplary embodiments relate to a method of manufacturing adisplay apparatus including light-emitting diodes (“LEDs”) and a displayapparatus manufactured by the method.

2. Description of the Related Art

A light-emitting diode (“LED”) is a semiconductor device convertingenergy that is generated by recombination of electrons and holes thatare injected to a PN junction diode by applying a forward voltage to thePN junction diode, into optical energy.

An inorganic LED emitting light by using inorganic compounds is widelyused as a backlight of a liquid crystal display (“LCD”) television(“TV”), illumination and an electric sign board. In addition, an organicLED emitting light by using organic compounds has been used inrelatively small electronic appliances such as a cell phone to a largeTV.

SUMMARY

Although an inorganic light-emitting diode (“LED”) is relativelycheaper, relatively brighter, and lasts longer than an organic LED, theinorganic LED may not be directly formed on a flexible substrate byusing a thin film processing like the organic LED.

One or more exemplary embodiments include a method of manufacturing afull-color display apparatus by transferring inorganic light-emittingdiodes (“LEDs”) directly onto a flexible substrate.

According to one or more exemplary embodiments of a method ofmanufacturing a display apparatus, the method includes: separating alight-emitting diode (“LED”) chip from a base substrate; disposing theseparated LED chip in a solution; disposing a substrate including afirst electrode thereon, in the solution; with the separated LED chipand the substrate including the first electrode thereon in the solution,applying a negative voltage to the substrate to attract the separatedLED chip to the first electrode on the substrate; mounting the LED chipattracted to the first electrode, on the first electrode; and removingthe substrate with the LED chip mounted on the first electrode from thesolution and drying the removed substrate, to form the displayapparatus.

The separated LED chip may be a flip chip including a first contact padand a second contact pad exposed facing a same direction.

The substrate may further include a second electrode spaced apart fromthe first electrode and insulated from the first electrode.

The applying the negative voltage to the substrate may include applyinga first negative voltage to the first electrode and applying a secondnegative voltage to the second electrode.

The first and second negative voltages may be direct current (“DC”)voltages.

The applying the negative voltage to the substrate may attract the firstcontact pad to the first electrode, and attract the second contact padto the second electrode.

The method may further include encapsulating the LED chip mounted on thefirst electrode, on the substrate, after the removing and drying thesubstrate.

The LED chip may be individually encapsulated on the substrate.

The separating the LED chip from the base substrate may includeseparating LED chips which respectively generate and emit differentcolor lights from each other, from the base substrate. A plurality ofthe LED chips among the plural LED chips may be encapsulated on thesubstrate by a common encapsulation member.

The separating the LED chip from the base substrate may includeseparating LED chips which respectively generate and emit differentcolor lights from each other, from the base substrate. The mounting theLED chip may include mounting a first color LED chip on the firstelectrode. The method may further include after the removing and dryingthe substrate with the first color LED chip mounted on the firstelectrode, covering the first color LED chip mounted on the firstelectrode by a passivation layer, and for all other color LED chipsamong the plural LED chips, repeatedly performing the disposing theseparated LED chip in the solution, the applying the negative voltage tothe substrate, the mounting the LED chip and the removing and drying thesubstrate.

According to one or more exemplary embodiments of a method ofmanufacturing a display apparatus, the method includes: separating aplurality of LED chips having different shapes from each other,respectively from base substrates; disposing all of the separatedplurality of LED chips having the different shapes in a solution;disposing a substrate including a plurality of recesses in which aplurality of first electrodes are respectively disposed, in thesolution, the recesses having different shapes respectivelycorresponding to the different shapes of the plurality of LED chips;with the separated LED chips and the substrate including the pluralityof first electrodes in the recesses thereof in the solution, applying anegative voltage to the substrate to respectively attract the separatedLED chips to the plurality of first electrodes of the correspondinglyshaped recesses of the substrate; respectively mounting the plurality ofLED chips attracted to the plurality of first electrodes in the recesseshaving the different shapes, on the plurality of first electrodes; andremoving the substrate with the plurality of LED chips mounted on theplurality of first electrodes from the solution and drying the removedsubstrate to form the display apparatus.

From among the separated plurality of LED chips having different shapesfrom each other, each LED chip may be a flip chip including a firstcontact pad and a second contact pad are exposed facing a samedirection.

The substrate may further include a plurality of second electrodesrespectively in the recesses in which in which the plurality of firstelectrodes is respectively disposed. Within respective recesses, theplurality of second electrodes may be spaced apart and insulated fromthe plurality of first electrodes.

The applying the negative voltage to the substrate may include applyinga first negative voltage to the plurality of first electrodes andapplying a second negative voltage to the plurality of secondelectrodes.

The first negative voltage and the second negative voltage may be directcurrent (“DC”) voltages.

For the respective recesses, the applying the negative voltage to thesubstrate may attract the first contact pads of the separated LED chipsto the plurality of first electrodes of the substrate, and may attractthe second contact pads of the separated LED chips to the secondelectrodes of the substrate.

The method may further include encapsulating the plurality of LED chipsmounted on the plurality of first electrodes, on the substrate, afterthe removing and drying the substrate.

Each of the plurality of LED chips may be individually encapsulated onthe substrate.

The plurality of LED chips may be encapsulated on the substrate by acommon encapsulation member.

According to one or more exemplary embodiments, a full-color displayapparatus is manufactured by the above method.

Other features and merits of the invention in addition to the abovedescription will be apparent from drawings, claims, and detaileddescription below.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other features will become apparent and more readilyappreciated from the following description of the exemplary embodiments,taken in conjunction with the accompanying drawings in which:

FIG. 1 is a flowchart illustrating an exemplary embodiment of a methodof manufacturing a display apparatus, according to the invention;

FIGS. 2A and 2B are a top plan view and a cross-sectional view of aplurality of light-emitting diode (“LED”) chips on a base substrate,according to the invention;

FIG. 3 is a cross-sectional view showing an exemplary embodiment ofprocess in which an array substrate is disposed in a solution and aplurality of LED chips are dropped onto the array substrate, accordingto the invention;

FIG. 4 is an enlarged cross-sectional view of a portion of the arraysubstrate relative to the LED chip of FIG. 3;

FIGS. 5A to 5F are schematic cross-sectional views illustrating anexemplary embodiment of processes of manufacturing a full-color LEDdisplay apparatus, according to the invention;

FIG. 6 is a flowchart illustrating another exemplary embodiment of amethod of manufacturing a display apparatus, according to the invention;

FIGS. 7A to 7D are schematic cross-sectional views illustrating anotherexemplary embodiment of processes of manufacturing a full-color LEDdisplay apparatus, according to the invention; and

FIG. 8 is an enlarged cross-sectional view of an exemplary embodiment ofa portion of an array substrate relative to a green LED chip, accordingto the invention.

DETAILED DESCRIPTION

Reference will now be made in detail to exemplary embodiments, examplesof which are illustrated in the accompanying drawings, where likereference numerals refer to like elements throughout. In this regard,the present exemplary embodiments may have different forms and shouldnot be construed as being limited to the descriptions set forth herein.Accordingly, the exemplary embodiments are merely described below, byreferring to the figures, to explain features of the presentdescription.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be present therebetween. In contrast, when an element isreferred to as being “directly on” another element, there are nointervening elements present.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, “a first element,” “component,” “region,” “layer” or“section” discussed below could be termed a second element, component,region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an,” and “the” are intended to include the pluralforms, including “at least one,” unless the content clearly indicatesotherwise. “Or” means “and/or.” As used herein, the term “and/or”includes any and all combinations of one or more of the associatedlisted items. Expressions such as “at least one of,” when preceding alist of elements, modify the entire list of elements and do not modifythe individual elements of the list. It will be further understood thatthe terms “comprises” and/or “comprising,” or “includes” and/or“including” when used in this specification, specify the presence ofstated features, regions, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, regions, integers, steps, operations, elements,components, and/or groups thereof.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The exemplary term“lower,” can therefore, encompasses both an orientation of “lower” and“upper,” depending on the particular orientation of the figure.Similarly, if the device in one of the figures is turned over, elementsdescribed as “below” or “beneath” other elements would then be oriented“above” the other elements. The exemplary terms “below” or “beneath”can, therefore, encompass both an orientation of above and below.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present claims.

FIG. 1 is a flowchart illustrating an exemplary embodiment of a methodof manufacturing a display apparatus according to the invention.

Referring to FIG. 1, according to the exemplary embodiment of the methodof manufacturing a display apparatus according to the invention, alight-emitting diode (“LED”) chip is separated from a base substratesuch as via an etching process (10), the LED chip is dipped in asolution (20), a negative voltage is applied to a substrate including afirst electrode thereon and the substrate is dipped in the solution(30), the LED chip is mounted on the first electrode of the substrate(40), and the substrate with the LED chip mounted to the first electrodeis pulled out of the solution and dried (50).

The exemplary embodiment of the method of manufacturing a displayapparatus, according to the invention, will be described in more detailbelow with reference to FIGS. 2A to 5F.

FIGS. 2A and 2B are a top plan view and a cross-sectional view of an LEDchip 100 provided in plural on a base substrate 101. Each LED chip 100generates and emits color light.

The base substrate 101 may be a conductive substrate or an insulatingsubstrate. In an exemplary embodiment, for example, the base substrate101 may include at least one of sapphire (Al₂O₃), SiC, Si, GaAs, GaN,ZnO, Si, GaP, InP, Ge, and Ga₂O₃.

The LED chip 100 may include a first semiconductor layer 102, a secondsemiconductor layer 104, an active layer 103 disposed between the firstsemiconductor layer 102 and the second semiconductor layer 104, a firstelectrode pad 106 at a distal end of the LED chip 100 and a secondelectrode pad 107.

In an exemplary embodiment of manufacturing the display apparatus, thefirst semiconductor layer 102, the active layer 103 and the secondsemiconductor layer 104 of the LED chip 100 may be formed by using ametal organic chemical vapor deposition (“MOCVD”) method, a chemicalvapor deposition (“CVD”) method, a plasma-enhanced CVD (“PECVD”) method,a molecular beam epitaxy (“MBE”) method, and a hydride vapor phaseepitaxy (“HVPE”) method.

The first semiconductor layer 102 may include, for example, a p-typesemiconductor layer. The p-type semiconductor layer may include asemiconductor material having a composition formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1), for example, GaN,AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN, and may be doped with ap-type dopant such as Mg, Zn, Ca, Sr, and Ba.

The second semiconductor layer 104 may include, for example, an n-typesemiconductor layer. The n-type semiconductor layer may include asemiconductor material having a composition formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1), for example, GaN,AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN, and may be doped with ann-type dopant such as Si, Ge, and Sn.

However, one or more exemplary embodiments are not limited to the aboveexamples, and the first semiconductor layer 102 may include an n-typesemiconductor layer and the second semiconductor layer 104 may include ap-type semiconductor layer.

The active layer 103 is an area where electrons and holes recombine witheach other, and transition to a lower energy level when the electronsand the holes recombine, and accordingly, light having a wavelengthcorresponding to the transitioned energy level is emitted. The activelayer 103 may include a semiconductor material having a compositionformula, for example, In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, and0≦x+y≦1), and may have a single quantum well structure or a multiplequantum well (“MQW”) structure. Also, the active layer 103 may have aquantum wire structure or a quantum dot structure.

The first electrode pad 106 is disposed or formed on the firstsemiconductor layer 102 at the distal end of the LED chip 100, and thesecond electrode pad 107 may be disposed or formed on the secondsemiconductor layer 104. The LED chip 100 according to the presentexemplary embodiment is a parallel type or a flip type, in which thefirst electrode pad 106 and the second electrode pad 107 are arranged inthe same direction as each other. The first electrode pad 106 and thesecond electrode pad 107 of the LED chip 100 are both disposed exposedor facing a same direction relative to the LED chip 100.

The plurality of LED chips 100 disposed or formed on the base substrate101 are isolated from each other such as by cutting the base substrate101 along cutting lines CL1 and CL2. The cutting may include using alaser beam. The plurality of LED chips 100 may be respectively disposedin a separable state relative to the base substrate 101 from the cuttingof the base substrate 101. Subsequently, the separable state LED chips100 may be separated from the base substrate 101 such as through a laserlift-off process.

FIG. 3 is a cross-sectional view showing an exemplary embodiment of aprocess in which an array substrate 200 is disposed in a container 300in which a solution 301 is contained, and the plurality of LED chips 100are dropped (indicated by the downward arrow) onto the array substrate200, and FIG. 4 is an enlarged cross-sectional view of the arraysubstrate 200 relative to the LED chip 100 on the array substrate 200 ofFIG. 3.

Referring to FIGS. 3 and 4, the array substrate 200 includes at leastone thin film transistor TFT on a substrate 201. A planarization layer205 may be disposed on the thin film transistor TFT, and a firstelectrode 211 that is connected to the thin film transistor TFT via avia hole 210 may be disposed or formed on the planarization layer 205.In addition, the array substrate 200 may include a bank layer 206disposed to partially cover the first electrode 211.

The substrate 201 may include various materials, for example, a glassmaterial or a plastic material. The substrate 201 may be flexible suchthat the array substrate 200 may be flexible.

A buffer layer 202 may be disposed or formed on the substrate 201. Thebuffer layer 202 provides a flat surface on the substrate 201, andreduces or effectively prevents infiltration of impurities or humidityinto the substrate 201.

The thin film transistor TFT may include an active layer 207, a gateelectrode 208, a source electrode 209 a and a drain electrode 209 b.Hereinafter, the thin film transistor TFT of a top gate type, in whichthe active layer 207, the gate electrode 208, the source electrode 209 aand the drain electrode 209 b are sequentially stacked, will bedescribed. However, one or more exemplary embodiments are not limitedthereto, and a thin film transistor TFT of various types, for example, abottom gate type, may be also applied to one or more exemplaryembodiments.

The active layer 207 may include a semiconductor material, for example,amorphous silicon or polycrystalline silicon. The active layer 207 mayinclude an organic semiconductor material, an oxide semiconductormaterial, etc.

A gate insulating layer 203 is disposed or formed on the active layer207. The gate electrode 208 is disposed or formed on the gate insulatinglayer 203. The gate electrode 208 may be connected to a gate line (notshown) which applies turning on/turning off signals to the thin filmtransistor TFT.

An inter-insulating layer 204 is disposed or formed on the gateelectrode 208, and the source electrode 209 a and the drain electrode209 b are disposed or formed on the inter-insulating layer 204.

The first electrode 211 connected to the thin film transistor TFT isformed on the planarization layer 205, and a second electrode 213 may bedisposed or formed on the bank layer 206. The first electrode 211 andthe second electrode 213 are spaced apart from each other and may bedisconnected from each other within the array substrate 200 excludingthe LED chip 100. For purpose of this description, positions of thefirst electrode 211 and the second electrode 213 may be referred to asdefining a shape of the first and second electrodes 211 and 213.

In a state where the array substrate 200 is disposed in the solution301, a first voltage V1 is applied to the first electrode 211 and asecond voltage V2 is applied to the second electrode 213. The first andsecond voltages V1 and V2 are respectively negative direct current(“DC”) voltages.

Since negative DC voltages are applied to the first electrode 211 andthe second electrode 213, free electrons of the LED chip 100 that isdropped into the solution 301 move away from the first electrode 211 andthe second electrode 213. In addition, due to an electrostatic inductioneffect, a positive potential is induced to a portion of the LED chip100, which is close to the first and second electrodes 211 and 213 towhich the negative voltages are applied. That is, the positive potentialis induced to the first and second electrode pads 106 and 107 of the LEDchip 100.

An attraction caused by an electrostatic force may be applied betweenthe first electrode 211 and the second electrode 213 in the arraysubstrate 200 and the first electrode pad 106 and the second electrodepad 107 of the LED chip 100, and the LED chip 100 may move toward thearray substrate 200 by the electrostatic force.

Here, since the first electrode pad 106 and the second electrode pad 107of the LED chip 100 and the first electrode 211 and the second electrode213 of the array substrate 200 have matching or complementing shapes,the first electrode pad 106 of the LED chip 100 is arranged to beadjacent and connected to the first electrode 211 of the array substrate200 and the second electrode pad 107 of the LED chip 100 is arranged tobe adjacent and connected to the second electrode 213 of the arraysubstrate 200.

FIGS. 5A to 5F are schematic cross-sectional views illustrating anexemplary embodiment of processes of manufacturing a full-color LEDdisplay apparatus. FIGS. 5A to 5F illustrate processes of repeatedlyperforming the processes illustrated with reference to FIGS. 3 and 4 aplurality of times.

Referring to FIG. 5A, a red LED chip 100R is aligned on the arraysubstrate 200 at a recess defined therein. In an exemplary embodiment,the red LED chip 100R is aligned on the array substrate 200 by theprocesses illustrated in FIGS. 3 and 4. The red LED chip 100R generatesand emits a color light such as a red color.

Although not shown in FIG. 5A in detail, with reference to FIG. 4, afirst electrode (not shown) connected to a thin film transistor of thearray substrate 200 and a second electrode (not shown) spaced apart fromthe first electrode of the array substrate 200 are disposed or formed atthe recess to define a shape complementing the shape of the red LED chip100R. An overall shape of the red LED chip 100R may correspond to theoverall shape of the recess at which the first and second electrodes aredisposed.

Referring to FIG. 5B, a passivation layer 401 is disposed to cover thered LED chip 100R, and a recess 402 is formed in a region at which agreen LED chip 100G (see FIG. 5C) is to be disposed or formed.

Although not shown in FIG. 5B in detail, with reference to FIG. 4, afirst electrode (not shown) connected to a thin film transistor of thearray substrate 200 and a second electrode (not shown) spaced apart fromthe first electrode of the array substrate 200 are disposed or formed atthe recess 402 to define a shape complementing the shape of the greenLED chip 100G. The passivation layer 401 exposes the above-describedstructure of the array substrate 200 at the recess 402. An overall shapeof the green LED chip 100G may correspond to the overall shape of therecess 402 at which the first and second electrodes are disposed.

Negative voltages are respectively applied to the first electrode (notshown) and the second electrode (not shown), and the green LED chip 100Gseparated from the base substrate 101 is dropped into a container, inwhich the solution is contained, in the same manner as illustrated inFIG. 3.

Referring to FIG. 5C, the green LED chip 100G is moved into the recess402 to be aligned on the array substrate 200. The green LED chip 100Ggenerates and emits a color light different from that of the red LEDchip 100R, such as generating and emitting a green color.

Referring to FIG. 5D, a passivation layer 403 is disposed to cover thered LED chip 100R and the green LED chip 100G, and a recess 404 isformed in a region at which a blue LED chip 100B (see FIG. 5E) is to bedisposed or formed.

Although not shown in FIG. 5D in detail, with reference again to FIG. 4,a first electrode (not shown) connected to a thin film transistor of thearray substrate 200 and a second electrode (not shown) spaced apart fromthe first electrode of the array substrate 200 are disposed or formed atthe recess 404 to define a shape complementing the shape of the blue LEDchip 100B. The passivation layer 403 exposes the above-describedstructure of the array substrate 200 at the recess 404. An overall shapeof the blue LED chip 100B may correspond to the overall shape of therecess 404 at which the first and second electrodes are disposed.

Negative voltages are applied respectively to the first electrode (notshown) and the second electrode (not shown), and the blue LED chip 100Bis dropped into a container, in which the solution is contained, in thesame manner as illustrated in FIG. 3.

Referring to FIG. 5E, the blue LED chip 100B is moved into the recess404 to be aligned on the array substrate 200. The blue LED chip 100Bgenerates and emits a color light different from that of the red andgreen LED chips 100R and 100G, such as generating and emitting a bluecolor.

Referring to FIG. 5F, after aligning the LED chips 100R, 100G and 100Bon the array substrate 200, an encapsulation process in which anencapsulation member 500 is provided in plural respectively on each ofthe LED chips, namely, the red, green and blue chips 100R, 100G, and100B, is performed.

FIG. 5F illustrates that each of the LED chips 100R, 100G and 100B isindividually encapsulated, but all the LED chips 100R, 100G and 100B maybe commonly encapsulated in an alternative exemplary embodiment.

Thus, the full-color display apparatus including LEDs may bemanufactured to include the LED chips 100R, 100G and 100B encapsulatedon the array substrate 200.

FIG. 6 is a flowchart illustrating another exemplary embodiment of amethod of manufacturing a display apparatus, according to the invention.

Referring to FIG. 6, another exemplary embodiment of a method ofmanufacturing a display apparatus, according to the invention includesetching and separating a plurality of LED chips having different shapesfrom each other from respective base substrates (11), dipping theplurality of LED chips having different shapes from each other in asolution (21), applying a negative voltage to a substrate includingthereon a plurality of first electrodes having different shapes fromeach other corresponding to the shapes of the plurality of LED chips,and disposing the substrate into the solution (31), mounting theplurality of LED chips having different shapes from each other onto theplurality of first electrodes having different shapes from each other(41), and pulling out the substrate with the plurality of LED chipshaving different shapes from each other mounted to the plurality offirst electrodes having different shapes from each other from thesolution and drying the substrate (51).

Different from the previous exemplary embodiment, oneetching/transferring/bonding process may be performed to realizefull-color for a display apparatus without performing theetching/transferring/bonding processes a plurality of times.

Referring to FIGS. 7A to 7D are schematic cross-sectional viewsillustrating another exemplary embodiment of processes of manufacturinga full-color LED display apparatus.

Referring to FIG. 7A, an array substrate 600 in which a plurality ofrecesses 601, 602 and 603 having different shapes from each other areformed, is provided.

Referring to FIG. 7B, the array substrate 600 of FIG. 7A is disposedinto a container 300 in which a solution 301 is contained. A pluralityof red LED chips 700R, a plurality of green LED chips 700G and aplurality of blue LED chips 700B are put into the container 300 in whichthe solution 301 and the array substrate 600 are contained. Instead ofsame shape LED chips 100 disposed into the container 300 at one time,FIG. 7B illustrates red, green and blue LED chips 700R, 700G and 700B ofdifferent shapes are all put into the container 300 at a same time. Thered, green and blue LED chips 700R, 700G and 700B generate and emit acolor light different from each other, such as generating and emitting ared, green and blue color.

Although not shown in detail in the drawings, with reference again toFIG. 4, a first electrode (not shown) connected to a thin filmtransistor of the array substrate 600 and a second electrode (not shown)spaced apart from the first electrode of the array substrate 600 aredisposed or formed at each of the recesses 601, 602 and 603. Negative DCvoltages are respectively applied to the first electrode (not shown) andthe second electrode (not shown) disposed or formed at each of therecesses 601, 602 and 603.

FIG. 8 is a diagram showing an exemplary embodiment of the green LEDchip 700G relative to first and second electrodes of the array substrate600, while each is disposed within the solution 301. Referring to FIG.8, in a thickness direction of the green LED chip 700G (e.g., verticaldirection in FIG. 8), a first electrode pad 701 of the green LED chip700G protrudes further than a second electrode pad 702 thereof, and thesecond electrode pad 702 is spaced horizontally and vertically apartfrom the first electrode pad 701.

In the array substrate 600 recess 602 corresponding to the green LEDchip 700G, a first electrode 604 and a second electrode 605 are disposedor formed to have shapes or positions complementing the shape of thefirst and second electrode pads 701 and 702 of the green LED chip 700G.An overall shape of the green LED chip 700G may correspond to theoverall shape of the recess 602 at which the first and second electrodes604 and 605 are disposed. For purpose of this description, positions ofthe first electrode 604 and the second electrode 605 within the arraysubstrate 600 may be referred to as defining a shape of the first andsecond electrodes 604 and 605.

Negative DC voltages are applied to the first and second electrodes 604and 605 and positive potentials are induced to the first and secondelectrode pads 604 and 605 of the green LED chip 700G. An attractioncaused by the electrostatic force is applied between the first andsecond electrodes 604 and 605 of the array substrate 600 and the firstand second electrode pads 701 and 702 of the green LED chip 700G.Accordingly, the green LED chip 700G may be moved toward the arraysubstrate 600.

Referring to FIG. 7C, a plurality of red LED chips 700R, a plurality ofgreen LED chips 700G and a plurality of blue LED chips 700B may berespectively aligned with the array substrate 600 at recesses 601, 602and 603 through one electrostatic induction process performed at a sametime.

Referring to FIG. 7D, after finishing arrangements of the plurality ofLED chips 700R, 700G, and 700B on the array substrate 600, anencapsulation process for forming an encapsulation member 800 on each ofthe LED chips, namely, the green, blue, and blue LED chips 700R, 700G,and 700B, is performed.

In FIG. 7D illustrates that each of the LED chips 700R, 700G, and 700Bis individually encapsulated, but all the LED chips 700R, 700G and 700Bmay be commonly encapsulated at the same time in an alternativeexemplary embodiment.

Thus, the full-color display apparatus including the LEDs may bemanufactured by performing the electrostatic induction process once, toinclude the LED chips 100R, 100G and 100B encapsulated on the arraysubstrate 600.

According to the one or more exemplary embodiments, the LEDs may betransferred to and aligned with positions of an array substrate in asimple manner by using electrostatic force.

In addition, a shape of the LED chip varies depending on a color oflight emitted therefrom. The substrate includes regions at which the LEDchips of different shapes are to be mounted, to have shapes matchingwith those of the LED chips. Accordingly, the different-shaped LED chipsemitting different color light may be mounted on the substrate byperforming an alignment process once.

It should be understood that exemplary embodiments described hereinshould be considered in a descriptive sense only and not for purposes oflimitation. Descriptions of features within each exemplary embodimentshould typically be considered as available for other similar featuresin other exemplary embodiments.

While one or more exemplary embodiments have been described withreference to the figures, it will be understood by those of ordinaryskill in the art that various changes in form and details may be madetherein without departing from the spirit and scope as defined by thefollowing claims.

What is claimed is:
 1. A method of manufacturing a display apparatus,the method comprising: separating a light-emitting diode chip from abase substrate; disposing the separated light-emitting diode chip in asolution; disposing a substrate including a first electrode and a secondelectrode which is spaced apart from the first electrode to be insulatedfrom the first electrode thereon, in the solution; with the separatedlight-emitting diode chip and the substrate including the first andsecond electrode thereon in the solution, applying a negative voltage tothe substrate to attract the separated light-emitting diode chip to thefirst and second electrodes on the substrate, wherein the applying thenegative voltage to the substrate comprises applying a first negativevoltage to the first electrode and applying a second negative voltage tothe second electrode; mounting the light-emitting diode chip attractedto the first and second electrode, on the first and second electrodes;and removing the substrate with the light-emitting diode chip mounted onthe first and second electrodes from the solution and drying the removedsubstrate, to form the display apparatus.
 2. The method of claim 1,wherein the separated light-emitting diode chip is a flip chipcomprising a first contact pad and a second contact pad exposed facing asame direction.
 3. The method of claim 2, wherein the applying thenegative voltage to the substrate attracts the first contact pad of theseparated light-emitting diode chip to the first electrode of thesubstrate, and attracts the second contact pad of the separatedlight-emitting diode chip to the second electrode of the substrate. 4.The method of claim 1, wherein the first and second negative voltagesare direct current voltages.
 5. The method of claim 1, furthercomprising encapsulating the light-emitting diode chip mounted on thefirst and second electrodes, on the substrate, after the removing anddrying the substrate.
 6. The method of claim 5, wherein thelight-emitting diode chip is individually encapsulated on the substrate.7. The method of claim 5, wherein the separating the light-emittingdiode chip from the base substrate comprises separating plurallight-emitting diode chips which respectively emit different colorlights from each other, from the base substrate, and a plurality of thelight-emitting diode chips is encapsulated on the substrate by a commonencapsulation member.
 8. The method of claim 1, wherein the separatingthe light-emitting diode chip from the base substrate comprisesseparating plural light-emitting diode chips which respectively emitdifferent color lights from each other, from the base substrate, and themounting the light-emitting diode chip comprises mounting a first colorlight-emitting diode chip on the first and second electrodes, the methodfurther comprising after the removing and drying the substrate with thefirst color light-emitting diode chip mounted on the first and secondelectrodes, covering the first color light-emitting diode chip mountedon the first and second electrodes by a passivation layer, and for allother color light-emitting diode chips among the plural light-emittingdiode chips, repeatedly performing the disposing the separatedlight-emitting diode chip in the solution, the applying the negativevoltage to the substrate, the mounting the light-emitting diode chip andthe removing and drying the substrate.
 9. A method of manufacturing adisplay apparatus, the method comprising: separating a plurality oflight-emitting diode chips having different shapes from each other,respectively from base substrates; disposing all of the separatedplurality of light-emitting diode chips having the different shapes in asolution; preparing a substrate including a plurality of recesses eachof which includes disposed therein a first electrode and a secondelectrode which is spaced apart from the first electrode to be insulatedfrom the first electrode; disposing the substrate including theplurality of recesses in which the first and second electrodes arerespectively disposed, in the solution, the recesses having differentshapes respectively corresponding to the different shapes of theplurality of light-emitting diode chips; with the separatedlight-emitting diode chips and the substrate including the plurality offirst and second electrodes in the recesses thereof in the solution,applying a negative voltage to the substrate to respectively attract theseparated light-emitting diode chips to the plurality of first andsecond electrodes of the correspondingly shaped recesses of thesubstrate, wherein the applying the negative voltage to the substratecomprises applying a first negative voltage to the plurality of firstelectrodes and applying a second negative voltage to the plurality ofsecond electrodes; respectively mounting the plurality of light-emittingdiode chips attracted to the plurality of first and second electrodes inthe recesses having the different shapes, on the plurality of first andsecond electrodes; and removing the substrate with the plurality oflight-emitting diode chips mounted on the plurality of first and secondelectrodes from the solution and drying the removed substrate to formthe display apparatus.
 10. The method of claim 9, wherein from among theseparated light-emitting diode chips having different shapes from eachother, each light-emitting diode chip is a flip chip comprising a firstcontact pad and a second contact pad exposed facing a same direction.11. The method of claim 10, wherein for the respective recesses, theapplying the negative voltage to the substrate attracts the firstcontact pads of the separated light-emitting diode chips to theplurality of first electrodes of the substrate, and attracts the secondcontact pads of the separated light-emitting diode chips to the secondelectrodes of the substrate.
 12. The method of claim 9, wherein thefirst negative voltage and the second negative voltage are directcurrent voltages.
 13. The method of claim 9, further comprisingencapsulating the plurality of light-emitting diode chips mounted on theplurality of first and second electrodes, on the substrate, after theremoving and drying the substrate.
 14. The method of claim 13, whereinthe plurality of light-emitting diode chips is individually encapsulatedon the substrate.
 15. The method of claim 13, wherein the plurality oflight-emitting diode chips is encapsulated on the substrate by a commonencapsulation member.
 16. A display apparatus manufactured by the methodof claim 9.